?2006 fairchild semiconductor corporation 1 www.fairchildsemi.com ksc1008 rev. b ksc1008 npn epitacia l silicon transistor tm september 2006 ksc1008 npn epitacial silicon transistor features ? low frequency amplifier medium speed switching. ? high collector-base voltage : v cbo =80v. ? collector current : i c =700ma ? collector power dissipation : p c =800mw ? suffix ?-c? means center collecto r (1.emitter 2.collector 3.base) ? non suffix ?-c? means side collector (1.emitter 2.base 3.collector) ? complement to ksa708 absolute maximum ratings * t a = 25 c unless otherwise noted * 1. these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. these are steady state limits. the factory should be cons ulted on applications involving pulsed or low duty cycle operatio ns. electrical characteristics * t a = 25c unless otherwise noted * dc item are tested by pulse test: pulse width 300us, duty cycle 2% h fe classification symbol parameter value units v cbo collector-base voltage 80 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 8 v i c collector current 700 ma p c collector power dissipation 800 mw t j junction temperature +150 c t stg storage temperature -55 ~ +150 c symbol parameter test condition min. typ. max. units bv cbo collector-base breakdown voltage i c =100 a, i e =0 80 v bv ceo collector-emitter breakdown voltage i c =10ma, i b =0 60 v bv ebo emitter-base breakdown voltage i e =10 a, i c =0 8 v i cbo collector cut-off current v cb =60v, i e =0 0.1 a i ebo emitter cut-off current v eb =5v, i c =0 0.1 a h fe dc current gain v ce =2v, i c =50ma 40 400 v ce (sat) collector-emitter saturation voltage i c =500ma, i b =50ma 0.2 0.4 v v be (sat) base-emitter saturation voltage i c =500ma, i b =50ma 0.86 1.1 v f t current gain bandwidth product v ce =10v, i c =50ma 30 50 mhz c ob output capacitance v cb =10v, i e =0, f=1mhz 8 pf classification r o y g h fe 40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400 ksc1008 : 1. emitter 2. base 3. collector ksc1008c : 1. emitter 2. collector 3. base to-92 1 2 3
2 www.fairchildsemi.com ksc1008 rev. b ksc1008 npn epitacia l silicon transistor package marking and ordering information note : affix ?-c-? - center collector pin. affix ?-r-, -o-, -y-, -g-? - h he classification suffix ?-bu? - bulk packing, straight lead form.(see package dimensions) suffix ?-tf? - tape& reel packing, 0.200 in-line spacing lead form. (see package dimensions) suffix ?-ta? - tape& ammo packing, 0.200 in-line spacing lead form. (see package dimensions) device (note) device marking package packing method qty(pcs) pin definitions ksc1008cobu c1008oc to-92 bulk -- 1.emitter 2.collector 3.base ksc1008cota c1008oc to-92 tape & ammo 2,000 1.emitter 2.collector 3.base ksc1008cybu c1008yc to-92 bulk -- 1.emitter 2.collector 3.base ksc1008cyta c1008yc to-92 tape & ammo 2,000 1.emitter 2.collector 3.base ksc1008gbu c1008g to-92 bulk -- 1.emitter 2.base 3.collector ksc1008gta c1008g to-92 tape & ammo 2,000 1.emitter 2.base 3.collector ksc1008obu c1008o to-92 bulk -- 1.emitter 2.base 3.collector ksc1008ota c1008o to-92 tape & ammo 2,000 1.emitter 2.base 3.collector ksc1008rbu c1008r to-92 bulk -- 1.emitter 2.base 3.collector ksc1008rta c1008r to-92 tape & ammo 2,000 1.emitter 2.base 3.collector ksc1008ybu c1008y to-92 bulk -- 1.emitter 2.base 3.collector KSC1008YTA c1008y to-92 tape & ammo 2,000 1.emitter 2.base 3.collector ksc1008ytf c1008y to-92 tape & reel 2,000 1.emitter 2.base 3.collector
3 www.fairchildsemi.com ksc1008 rev. b ksc1008 npn epitacia l silicon transistor typical characteristics figure 1. static characteristic figure 2. dc current gain figure 3. base-emitter saturation voltage collector-emitter saturation voltage figure 4. base-emitter on voltage figure 5. collector output capacitance 0 5 10 15 20 25 30 35 40 45 50 0 20 40 60 80 100 120 140 160 180 200 i b = 1.8ma i b = 1.6ma i b = 1.4ma i b = 1.2ma i b = 1.0ma i b = 0.8ma i b = 0.6ma i b = 0.4ma i b = 0.2ma i c [ma], collector current v ce [v], collector-emitter voltage 1 10 100 1000 0 20 40 60 80 100 120 140 160 180 200 220 240 v ce = 2v h fe , dc current gain i c [ma], collector current 1 10 100 1000 0.01 0.1 1 10 v be (sat) v ce (sat) i c =10i b v be (sat), v ce (sat)[v], saturation voltage i c [ma], collector current 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 10 100 1000 v ce =2v i c [ma], collector current v be [v], base-emitter voltage 1 10 100 1 10 100 f=1mhz i e =0 c ob [pf],capactiance v cb [v], collector-base voltage
4 www.fairchildsemi.com ksc1008 rev. b ksc1008 npn epitacia l silicon transistor to-92 straight lead form to-92 0.200 in-line spacing lead form dimensions in inches[millimeters] package dimensions dimensions in millime 0.46 0.10 1.27typ (r2.29) 3.86max [1.27 0.20 ] 1.27typ [1.27 0.20 ] 3.60 0.20 14.47 0.40 1.02 0.10 (0.25) 4.58 0.20 4.58 +0.25 ?.15 0.38 +0.10 ?.05 0.38 +0.10 ?.05 dimensions in millimeters
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